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Si4646DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0115 at V GS = 10 V
0.0145 at V GS = 4.5 V
I D (A) a
12 e
12 e
Q g (Typ.)
13.7 nC
? Halogen-free According to IEC 61249-2-21
Definition
? SkyFET ? Monolithic TrenchFET ? Power
MOSFET and Schottky Diode
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Notebook PC
SO-8
- System Power
? Buck Converter
D
S
S
S
1
2
3
8
7
6
D
D
D
? Synchronous Rectifier Switch
G
4
5
D
G
Schottky Diode
Top V ie w
Orderin g Information: Si4646DY-T1-E3 (Lead (P b )-free)
Si4646DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
12 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
12 e
12 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
9.5 b, c
50
5.6
2.7 b, c
20
20
A
mJ
T C = 25 °C
6.25
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
4.0
3.0 b, c
W
T A = 70 °C
1.9 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
33
16
42
20
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
e. Package limited.
Document Number: 68762
S09-0868-Rev. B, 18-May-09
www.vishay.com
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